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VISHAY
CG1 / DG1
Vishay Semiconductors
Standard Sinterglass Diode
Features
* Specially designed for clamping circuits, horizontal deflection systems and damper applications * High temperature metallurgically bonded construction * Cavity-free glass passivated junction * 1.5 ampere operation at Tamb = 50 C with no thermal runaway * Hermetically sealed package
17031
Mechanical Data
Case: DO-204AP Sintered glass case Terminals: Solder plated axial leads, solderable per MILSTD- 750, Method 2026
Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 560 mg
Parts Table
Part CG1 DG1 Type differentiation VRRM = 1400 V VRRM = 1500 V DO-204AP(G-1) DO-204AP(G-1) Package
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Maximum average forward rectified current Peak forward surge current Test condition see electrical characteristics Part CG1 DG1 0.375 " (9.5 mm) lead length at Tamb = 50 C 8.3 ms single half sine wave superimposed on rated load (JEDEC Method) 0.375 " (9.5 mm) lead length at Tamb =100 C Symbol VR = VRRM VR = VRRM IF(AV) IFSM Value 1400 1500 1.5 40 Unit V V A A
Maximum full load reverse current full cycle average Operating junction and storage temperature range
IR(AV) TJ, TSTG
50 - 55 to + 175
A C
Maximum Thermal Resistance
Tamb = 25 C, unless otherwise specified Parameter Typical thermal resistance 1)
1)
Test condition
Symbol RJA
Value 55
Unit K/W
Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, P.C.B. mounted
Document Number 86081 Rev. 1.2, 28-Jan-03
www.vishay.com 1
CG1 / DG1
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Maximum instantaneous forward voltage Maximum reverse current Test condition IF = 1.0 A VR = VRRM, Tamb = 25 C VR = VRRM, Tamb = 100 C Maximum reverse recovery time IF = 0.5 A, IR = 50 mA IF = 0.5 A, IR = 1.0 A, Ir = 0.25 A Typical junction capacitance VR = 4.0 V, f = 1 MHz CG1 DG1 CG1 DG1 Part Symbol VF IR IR trr trr trr trr Cj 0.7 0.7 15 Min Typ.
VISHAY
Max 1.1 5.0 100 15 20 1.5 1.5
Unit V A A s s s s pF
Typical Characteristics (Tamb = 25 C unless otherwise specified)
Average Forward Rectified Current (A)
1.5 1.25
60 Hz Resistive or Inductive Load 0.375" (9.5mm) Lead Length
Instantaneous Forward Current (A)
10
TJ = 150C
1.0
1
0.75 0.5 0.25 0 25 50 75 100 125 150 175
TJ = 25C
0.1
Capacitance Load Ipk/IAV = 5.0 10 20
Pulse Width = 300s 1% Duty Cycle
0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6
gCG1_01
Ambient Temperature (C)
Figure 1. Forward Current Derating Curve
gCG1_03
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Peak Forward Surge Current (A)
TA = 50C 8.3ms Single Half Sine-Wave
40
Instantaneous Reverse Current (A)
50
10
TJ = 25C No Load Condition
30
TJ = 125C
1
20
Rated Load Conditions (JEDEC Method)
10
0.1
0 1
gCG1_02
0.01 0 20 40
TJ = 25C
60 80 100
10
100
gCG1_04
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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Document Number 86081 Rev. 1.2, 28-Jan-03
VISHAY
CG1 / DG1
Vishay Semiconductors
30
Junction Capacitance (pF)
TJ = 25C f = 1.0 MHz Vsig = 50mVp-p
10
1 1
gCG1_05
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
Package Dimensions in mm (Inches)
0.86 (0.034) 0.71 (0.028) DIA. 25.4 (1.0) MIN.
6.1 (0.240) MAX.
3.8 (0.150) 2.5 (0.100) DIA.
25.4 (1.0) MIN.
17030
Document Number 86081 Rev. 1.2, 28-Jan-03
www.vishay.com 3
CG1 / DG1
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 86081 Rev. 1.2, 28-Jan-03

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